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Geng Academic Fraud Review Report: Vapour–liquid–solid–solid growth of two-dimensional non-layered β-Bi₂O₃ crystals with high hole mobility

Academic fraud report · Geng Detector

Summary

This report applies the Geng method (五式) to evaluate the Nature Materials article (DOI: 10.1038/s41563-025-02141-w) by Xiong, Xu, Zou et al., published online 7 March 2025. Verdict: SUSPICIOUS (存疑). The review identifies four main concerns. (1) Timeline anomaly: the paper was received 2 July 2022 and accepted 15 January 2025, yielding a ~2.5-year review period, rare for Nature Materials and suggesting major revision difficulty. (2) Implausible processing robustness: the transfer protocol soaks SiO₂/Si substrates with 0.3-nm-thick non-layered β-Bi₂O₃ in 60 °C DI water for 40 min, yet the authors report a hole mobility of 136.6 cm² V⁻¹ s⁻¹ and Ra = 0.17 nm, which is physically inconsistent for an ultrathin non-layered oxide. (3) Unusual equipment choice: electron-beam lithography was performed on a TESCAN VEGA 3 teaching-grade tungsten SEM rather than a dedicated FE-EBL system, despite the report of near-ohmic contacts (1.07 kΩ μm). (4) Thermodynamic concern: directly CVD-growing a 0.3-nm non-layered tetragonal oxide on SiO₂ without passivation is questionable, since 3D islanding is favored. No image-based duplication analysis could be performed. Confidence is moderate; all claims derive from the article text and figure captions.

Verdict

Suspicious (🟡) — Multiple coherent anomalies in process description, equipment selection, and timeline warrant caution, but no decisive evidence of fabrication is presented. Pixel-level image forensics were not possible from the PDF alone.

Key findings

  • Prolonged review cycle (Finding 1): Received 2 July 2022; accepted 15 January 2025 — an unusually long ~2.5-year review window for Nature Materials, possibly indicating extensive revision or re-work.
  • Implausible water-soaking stability (Finding 2): The transfer protocol soaks samples in 60 °C DI water for 40 min. Such treatment is expected to be destructive for sub-nanometer non-layered oxide sheets, yet the authors report Ra = 0.17 nm and μ = 136.6 cm² V⁻¹ s⁻¹ afterward.
  • Unusual EBL instrument choice (Finding 3): EBL was carried out on a TESCAN VEGA 3 (a bench-top tungsten-filament SEM), atypical for high-mobility 2D FET fabrication yielding contact resistance as low as 1.07 kΩ μm.
  • Thermodynamic plausibility (Finding 4): Direct CVD growth of a 0.3-nm-thick non-layered tetragonal β-Bi₂O₃ (with c ≈ 0.56 nm) on plain SiO₂ is unlikely without passivation or strong substrate templating; 3D islanding would be favored.
  • Scope limitation: No image-duplication, cloning, splicing, or contrast-manipulation analysis was performed because raw high-resolution images were not available.
  • Evidence highlights

  • DOI: 10.1038/s41563-025-02141-w
  • Received: 2022-07-02; Accepted: 2025-01-15 (≈ 30 months).
  • Methods — Transfer of 2D β-Bi₂O₃: "SiO₂/Si substrates with 2D β-Bi₂O₃ were soaked in 60 °C DI water for 40 min to remove residual salt."
  • Reported device metrics: hole mobility 136.6 cm² V⁻¹ s⁻¹; surface roughness Ra = 0.17 nm; contact resistance 1.07 kΩ μm.
  • Methods — Fabrication of 2D β-Bi₂O₃ FETs: "electron-beam lithography was performed using a TESCAN VEGA 3 scanning electron microscope."
  • Reported film thickness: 0.3 nm, against the bulk β-Bi₂O₃ c-axis ≈ 0.56 nm.
  • Figure 1 (Page 689): authors acknowledge symmetry breaking in the sub-unit-cell regime.
  • Notes

  • The four findings are internally consistent in raising plausibility questions, but none individually proves data fabrication. They should be treated as reasonable hypotheses to be tested against raw data.
  • Recommended follow-ups: (i) verify whether mobility measurements were taken before or after the 60 °C water soak; (ii) request original HAADF-STEM images and atomic-resolution EDS for the 0.3-nm film to rule out substrate noise or contamination; (iii) track reuse of the methodology in subsequent papers from the group; (iv) post a structured query on PubPeer regarding water-soak stability and SEM-based EBL throughput.
  • Confidence: moderate. The timeline and the SEM-as-EBL choice are weakly indicative; the water-soak claim and the 0.3-nm non-layered oxide on bare SiO₂ are stronger red flags but remain theoretically possible under special kinetic conditions. Final judgment requires institutional investigation and inspection of the underlying raw datasets.

Tags

#academic-fraud-review#nature-materials#bi2o3#2d-materials#cvd-growth#methodology-questions#plausibility-issues#timeline-anomaly

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