Verdict
🟡 Suspect — The paper contains several methodologically and physically questionable claims. No definitive evidence of data fabrication was identified, but the cumulative plausibility issues warrant author clarification and independent verification.
Key findings
- Suspiciously perfect arithmetic on drift length — Reported μτ of 1.8×10⁻⁴ cm² V⁻¹ under an applied field of 800 V mm⁻¹ (= 8000 V cm⁻¹) yields a drift length of 1.44 cm, which is approximately 11.5× the stated device thickness (~1.25 mm). Combined with the claimed ultra-low dark current and ~500× photoconductive gain at 1000 V bias, this strains typical perovskite-device physics.
- Photolithography protocol inconsistent with standard chemistry — The Methods describe a positive photoresist cast from an 'aqueous solution,' developed, then stripped using 0.5 wt% NaOH ('Wet RIE'). Standard positive photoresists (e.g., AZ, S1800) are solvent-borne and developed in TMAH-based developers; the described sequence is chemically implausible as written.
- Resolution claim exceeds the test target's physical limit — Figure 5h–k and the corresponding text report 17.2 lp mm⁻¹ by computational MTF extrapolation from a line-pair card whose nominal maximum is 10.0 lp mm⁻¹, which is methodologically unreliable and sensitive to noise-filter and ESF-fit choices.
- No anomalies in timeline, equipment, or crystallographic data — Submission 2023-05-15, acceptance 2023-12-27; instruments cited (Rigaku SmartLab III, Hitachi Regulus8100, Bruker AVANCE III 600 MHz) were commercially available; CCDC 2224700 follows a standard 2022 registration format.
- Image-level integrity not assessable from text alone — SEM (Figure 3e), XRD (Figure 1b/4a), and long-term stability curves (Figure 4h) require original files for splice/Crop/contrast-stretch analysis.
- μτ × E calculation: 1.8×10⁻⁴ cm² V⁻¹ × 8000 V cm�¹ = 1.44 cm; device thickness ≈ 0.125 cm (≈1.25 mm); reported sensitivity 2.5×10⁶ μC Gy_air⁻¹ cm�² at 1000 V bias.
- Methods wording: 'spin-coating positive photoresist (aqueous solution) ... UV exposure 12 s ... develop 8 s ... immerse in 0.5 wt% NaOH (aq) for 8 s to remove exposed photoresist (Wet RIE).'
- Resolution: 10.0 lp mm⁻¹ test-card upper bound vs. 17.2 lp mm⁻¹ claimed via computational MTF.
- DOI: 10.1038/s41467-023-44644-7; submission/acceptance dates 2023-05-15 / 2023-12-27.
- Confidence: moderate. No direct image manipulation or duplicated data was detected; concerns are inferential and methodological.
- Recommended actions: (1) request the photoresist product name and SDS, plus the actual developer composition; (2) request MTF source code, raw slanted-edge images, and ESF/LSF fits; (3) request dark-current stability data at 1000 V bias over the 17.2 lp mm⁻¹ exposure window; (4) consider a PubPeer post summarizing the methodological concerns.
- Limitations: this report is text-based; pixel-level image forensics were not performed.
- Disclaimer: AI-assisted; not an official finding of misconduct.