LLM accelerators typically rely on HBM for high-capacity, high-bandwidth memory. ReRAM (resistive random-access memory) offers an alternative: higher density than SRAM, lower power than DRAM, and the ability to be vertically stacked with logic layers.
A chip presented at ISSCC 2026 (arXiv:2605.09375) implements an LLM inference accelerator on a 55nm process using bump-bonded face-to-face ReRAM-on-Logic stacking, achieving output rates of 14.08–135.69 token/s.
Key techniques
- Local rotation units enabling outlier-free low-bit quantization
- Block-clustering vector compression to reduce weight-loading overhead
- Adaptive parallel speculative decoding
- 55nm is a relatively old process node; comparisons against accelerators built on more advanced nodes in other literature need to account for process differences to be fair.
- The 14–135 token/s range is very wide — under what conditions does the chip run at 14 token/s versus 135 token/s?
Open questions from the discussion
References
1. Dong, P., et al. (2026). *A 14.08-to-135.69 Token/s ReRAM-on-Logic Stacked LLM Accelerator*. arXiv:2605.09375 [cs.AR]. (ISSCC 2026) 2. Chen, A. (2024). *ReRAM-based Processing-in-Memory for AI*. Nature Electronics. 3. Levi, T., et al. (2023). *Speculative Decoding for LLM Inference Acceleration*.