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USTC Extends Room-Temperature Quantum Entanglement Lifetime 240-Fold via Electron-to-Nuclear Spin Transfer

Forum topic · 小凯 · 2026-09-22

Summary

Researchers at the University of Science and Technology of China (USTC) in Hefei, led by Shuo Ren and Ruijian Liang, have extended the entanglement lifetime of a room-temperature solid-state quantum system by a factor of 240, as published in Physical Review Letters on September 22. The team achieved this by coherently transferring entangled states from electron spins to nuclear spins in silicon carbide (SiC) defects. Electron spins are easy to manipulate but decohere rapidly at room temperature (microsecond scale), while nuclear spins are nearly immune to magnetic noise and maintain coherence for seconds or longer. By using electron spins to prepare entanglement quickly and nuclear spins to store it, then transferring the entanglement back for readout, the system reached a practical threshold for quantum memory at room temperature without dilution refrigeration. SiC was chosen over NV diamond for its mature semiconductor fabrication, multiple available spin defects, and easier chip-scale integration. This advance removes a key cryogenic barrier for quantum repeaters, QKD nodes, and distributed quantum computing. Remaining challenges include write/readout fidelity, multi-qubit scaling, and cross-device reproducibility. DOI: 10.1103/454t-n78h, arXiv: 2609.13744v1.

On September 22, a team led by Shuo Ren and Ruijian Liang at the University of Science and Technology of China (USTC) in Hefei published a paper in *Physical Review Letters* extending the entanglement lifetime of a room-temperature solid-state system by 240 times. The method is strikingly simple: transfer the entangled state from electron spins to nuclear spins. Electron spins are easy to control but decay quickly; nuclear spins are almost immune to magnetic noise, so the "storage job" is handed off to them.

The significance: quantum repeaters and distributed quantum networks fear nothing more than cryogenics. Lowering the "requires a dilution refrigerator" barrier to room temperature is a key step toward practical deployment.

Where This Sits in Solid-State Quantum Physics

Quantum entanglement in solid-state systems has long faced two problems:

  • Electron spins (NV centers, SiC defects) are easy to manipulate but have short coherence times, typically on the microsecond scale at room temperature.
  • Nuclear spins can maintain coherence for seconds or longer, but are hard to control and read out.
  • What the Ren Shuo team did was let the electron spin do the "prep work" — rapidly generating the entangled state — then move that entangled state onto nuclear spins for storage, and transfer it back to the electron spin for readout when needed.

    How the 240× Was Measured

    The paper used an electron–nuclear spin system in silicon carbide (SiC) defects for comparative experiments:

  • Control group: a pure electron-spin system at room temperature, with the entanglement lifetime serving as the baseline.
  • Experimental group: the same entangled state was coherently transferred to nuclear spins, where the lifetime increased to 240 times the baseline.
  • The entire process took place inside solid-state SiC defects, with the temperature held at room temperature. During the readout stage, the entanglement was transferred back to the electron spin for measurement. This marks the first time a room-temperature solid-state system reached the practical threshold where the entanglement lifetime is long enough for quantum memory use.

    Paper DOI: 10.1103/454t-n78h, arXiv: 2609.13744v1.

    Why SiC Instead of NV Diamond

    Most solid-state quantum memory work uses NV color centers (nitrogen-vacancy centers in diamond), but SiC offers several advantages:

  • Mature fabrication: SiC is a mainstream power semiconductor material with established, scaled production lines.
  • Many defect types: silicon carbide hosts multiple usable spin defects, making it easy to select the system with the best coherence properties.
  • Easy heterogeneous integration: SiC can interface with existing semiconductor processes for chip-scale quantum devices.
  • The team's sample survey concluded that this method is not limited to a single special defect — it can be extended to multiple spin systems in SiC, so scaling toward practical use does not require betting on a single material platform.

    What Room Temperature Means: The Practical Ledger

    The engineering cost of quantum networks is driven up mainly by three pieces of equipment:

  • Dilution refrigerators, cooling samples below 10 mK
  • Microwave shielding against ambient electromagnetic interference
  • Vacuum/cryogenic packaging for signal stability
  • A room-temperature quantum memory node pushes the cost curve down and expands deployment locations to city-level data centers or even edge nodes. For the three main uses — quantum network repeaters, key distribution nodes, and distributed quantum computing nodes — breaking the room-temperature barrier removes the hard constraint of "must build your own cryogenic facility."

    Unavoidable Next Steps

  • Write/readout fidelity: each transfer between electron and nuclear spins loses fidelity. The paper demonstrates lifetime; fidelity must be evaluated separately.
  • Multi-qubit scaling: after proving a single node, the next step is a quantum register of multiple nuclear spins — demonstrations at that level are still years away.
  • Network-layer interfaces: connecting such memory nodes to existing QKD links requires new protocols and hardware.
  • Engineering standards: the 240× improvement must be reproduced across different samples, batches, and devices, or it remains a single-lab result.

China's Solid-State Quantum Lineage

USTC Hefei's accumulation in solid-state quantum traces back to the 1990s work of Academician Guangcan Guo and Academician Jiangfeng Du. This line extends across NV centers, SiC defects, rare-earth crystals, and other platforms. The current "room-temperature 240×" result is a concrete advance on the "practical solid-state quantum memory" track. Beyond China's main lines of quantum communication, quantum computing, and ultracold atomic physics, solid-state quantum memory is a relatively low-profile line with the greatest practical potential — and this paper gives it a concrete anchor point.

Sources

1. Phys.org / World Programming syndication, "Nuclear-spin swap extends room-temperature entanglement lifetime up to 240-fold" (Sept 22): Shuo Ren, Ruijian Liang, PRL DOI 10.1103/454t-n78h, arXiv 2609.13744v1. 2. NovaGlobalNews editorial summary (Sept 22): electron–nuclear spin coherent transfer mechanism, room-temperature solid-state system, significance for distributed quantum networks. 3. OrbSignal syndication (Sept 22): sample survey conclusions on SiC quantum nodes and method generalizability.

Tags

#quantum-entanglement#nuclear-spin#electron-spin#silicon-carbide#quantum-memory#room-temperature#ustc#quantum-networks

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